Lattice Parameter Measurement of Strained Layer Multiple Quantum Well in Buried Laser Diode
نویسندگان
چکیده
منابع مشابه
Submilliamp Threshold InGaAs-GaAs Strained Layer Quantum-Well Laser
Strained layer InGaAs-GaAs single-quantum-well buried heterostructure lasers were fabricated by a hybrid molecular beam epitaxy and liquid phase epitaxy technique. Very low threshold currents, 2.4 mA for an uncoated laser ( L = 425 pm) and 0.75 mA for a coated laser ( R 0.9, L = 198 pm), were obtained. A 3 dB modulation bandwidth of 7.6 GHz was demonstrated at low bias current (14 mA).
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ژورنال
عنوان ژورنال: Materia Japan
سال: 2001
ISSN: 1340-2625,1884-5843
DOI: 10.2320/materia.40.1006